parameter typ. max. units r ja maximum junction-to-ambient 75 100
hexfet power mosfet these p-channel mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. a thermally enhanced large pad leadframe has been incorporated into the standard sot-23 package to produce a hexfet power mosfet with the industry's smallest footprint. this package, dubbed the micro3 ? , is ideal for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro3 allows it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. the thermal resistance and power dissipation are the best available. thermal resistance v dss = -20v r ds(on) = 0.065 ultra low on-resistance p-channel mosfet sot-23 footprint low profile (<1.1mm) available in tape and reel fast switching lead-free halogen-free
parameter max. units v ds drain- source voltage -20 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -3.7 i d @ t a = 70c continuous drain current, v gs @ -4.5v -2.2 a i dm pulsed drain current -22 p d @t a = 25c power dissipation 1.3 p d @t a = 70c power dissipation 0.8 linear derating factor 0.01 w/c e as single pulse avalanche energy 11 mj v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c
micro3 ? s g 1 2 d 3 product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -1.0a, v gs = 0v t rr reverse recovery time ??? 29 43 ns t j = 25c, i f = -1.0a q rr reverse recoverycharge ??? 11 17 nc di/dt = -100a/ s repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle 2%. source-drain ratings and characteristics -1.3 -22 s d g
!"#
$
starting t j = 25c, l = 1.65mh r g = 25 , i as = -3.7a. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 ??? ??? v v gs = 0v, i d = -250 a v (br)dss / t j breakdown voltage temp. coefficient ??? -0.009 ??? v/c reference to 25c, i d = -1ma ??? 0.050 0.065 v gs = -4.5v, i d = -3.7a ??? 0.080 0.135 v gs = -2.5v, i d = -3.1a v gs(th) gate threshold voltage -0.40 -0.55 -1.2 v v ds = v gs , i d = -250 a g fs forward transconductance 6.0 ??? ??? s v ds = -10v, i d = -3.7a ??? ??? -1.0 v ds = -20v, v gs = 0v ??? ??? -25 v ds = -20v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -12v gate-to-source reverse leakage ??? ??? 100 v gs = 12v q g total gate charge ??? 8.0 12 i d = -3.7a q gs gate-to-source charge ??? 1.2 1.8 nc v ds = -10v q gd gate-to-drain ("miller") charge ??? 2.8 4.2 v gs = -5.0v t d(on) turn-on delay time ??? 350 ??? v dd = -10v t r rise time ??? 48 ??? i d = -3.7a t d(off) turn-off delay time ??? 588 ??? r g = 89 t f fall time ??? 381 ??? r d = 2.7 c iss input capacitance ??? 633 ??? v gs = 0v c oss output capacitance ??? 145 ??? pf v ds = -10v c rss reverse transfer capacitance ??? 110 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) % & r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current
product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
|
